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CEB14A04 - N-Channel Enhancement Mode Field Effect Transistor

Features

  • 40V, 180A, RDS(ON) = 5mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. CEP14A04/CEB14A04 D D G G D S S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 S.

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Datasheet Details

Part number CEB14A04
Manufacturer CET
File Size 416.34 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEB14A04 Datasheet

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Full PDF Text Transcription

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 180A, RDS(ON) = 5mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. CEP14A04/CEB14A04 D D G G D S S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID@ TC = 25 C ID@ TC = 100 C IDM PD EAS IAS TJ,Tstg 40 Units V V A A A W W/ C mJ A C ±20 180 125 720 200 1.
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