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CEP30N15L/CEB30N15L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
150V, 30A, RDS(ON) = 70mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 150
VGS ±20
Drain Current-Continuous @ TC = 25 C @ TC = 100 C
Drain Current-Pulsed a
ID IDM
30 21 120
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
150 1.
CEB30N15L Datasheet
