150V, 30A, RDS(ON) = 70mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
S.
Full PDF Text Transcription for CEB30N15L (Reference)
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CEP30N15L/CEB30N15L N-Channel Enhancement Mode Field Effect Transistor FEATURES 150V, 30A, RDS(ON) = 70mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 5V. Super high dense cell desi...
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70mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 150 VGS ±20 Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a ID IDM 30 21 120 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 150 1.
CEB30N15L Datasheet
