CEB30N3 - N-Channel Enhancement Mode Field Effect Transistor
CET
Key Features
Type CEP30N3 CEB30N3 CEF30N3
VDSS 300V 300V
300V
RDS(ON) 110mΩ 110mΩ
110mΩ
ID 30A 30A 30A e
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S.
Full PDF Text Transcription for CEB30N3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
CEB30N3. For precise diagrams, and layout, please refer to the original PDF.
CEP30N3/CEB30N3 CEF30N3 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP30N3 CEB30N3 CEF30N3 VDSS 300V 300V 300V RDS(ON) 110mΩ 110mΩ 110mΩ...
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CEP30N3 CEB30N3 CEF30N3 VDSS 300V 300V 300V RDS(ON) 110mΩ 110mΩ 110mΩ ID 30A 30A 30A e @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
CEB30N3 Datasheet
