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CEP30P03/CEB30P03
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -30A, RDS(ON) =32mΩ @VGS = -10V. RDS(ON) =50mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a
VDS VGS
ID
IDM
-30
±20
-30
-21 -120
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
50 0.
CEB30P03 Datasheet
