CEB35P03 Key Features
- 30V, -35A, RDS(ON) =36mΩ @VGS = -10V. RDS(ON) =57mΩ @VGS = -5V. Super high dense cell design for extremely low RDS(ON).
- Part: CEB35P03
- Manufacturer: CET
- Size: 105.13 KB
Related CET Datasheets
| Part Number | Description |
|---|---|
| CEB35P10 | P-Channel MOSFET |
| CEB3060 | N-Channel MOSFET |
| CEB3070 | N-Channel MOSFET |
| CEB30N15L | N-Channel MOSFET |
| CEB30N3 | N-Channel Enhancement Mode Field Effect Transistor |
CEB35P03 Description
CEP35P03/CEB35P03 P-Channel Enhancement Mode Field Effect Transistor.