CEB8030LA
CEB8030LA is N-Channel MOSFET manufactured by CET.
FEATURES
30V, 75A,RDS(ON) = 6.5mΩ @VGS = 10V. RDS(ON) = 9.0mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
CEB SERIES TO-263(DD-PAK)
CEP SERIES
TO-220
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
±20
75 225 75 0.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Units V V A A W
W/ C C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 2.0 62.5
Units C/W C/W
2003.February
- 170 http://.cetsemi.
CEP8030LA/CEB8030LA
Electrical Characteristics Tc =...
