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CEC3172 - N-Channel MOSFET

Datasheet Summary

Features

  • 30V, 26A, RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 32mΩ @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D G S 56 78 Bottom View DFN3.
  • 3 43 21.

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Datasheet Details

Part number CEC3172
Manufacturer CET
File Size 362.42 KB
Description N-Channel MOSFET
Datasheet download datasheet CEC3172 Datasheet
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Full PDF Text Transcription

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CEC3172 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 26A, RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 32mΩ @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D G S 56 78 Bottom View DFN3*3 43 21 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Current-Continuous@RθJc @RθJA Drain Current-Pulsed a@RθJc ID 26 ID 9 IDM 92 @RθJA IDM 36 Maximum Power Dissipation PD 2.
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