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CEC3833 - N-Channel MOSFET

Key Features

  • 30V, 17A, RDS(ON) = 5.0mΩ @VGS = 10V. RDS(ON) = 7.2mΩ @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D G S 5 67 8 Bottom View DFN3.
  • 3 4 321.

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Datasheet Details

Part number CEC3833
Manufacturer CET
File Size 492.82 KB
Description N-Channel MOSFET
Datasheet download datasheet CEC3833 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CEC3833 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 17A, RDS(ON) = 5.0mΩ @VGS = 10V. RDS(ON) = 7.2mΩ @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D G S 5 67 8 Bottom View DFN3*3 4 321 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 17 IDM 68 Maximum Power Dissipation PD 2.