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CEC3P07 - P-Channel MOSFET

Key Features

  • -30V, -37A, RDS(ON) = 10mΩ @VGS = -10V. RDS(ON) = 15mΩ @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D G S 8 76 5 Bottom View DFN3.
  • 3 4 321.

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Datasheet Details

Part number CEC3P07
Manufacturer CET
File Size 597.76 KB
Description P-Channel MOSFET
Datasheet download datasheet CEC3P07 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CEC3P07 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -37A, RDS(ON) = 10mΩ @VGS = -10V. RDS(ON) = 15mΩ @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D G S 8 76 5 Bottom View DFN3*3 4 321 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 Drain Current-Continuous TC = 25 C TC = 100 C TA = 25 C TA = 100 C ID -37 -23 -11 -7 Drain Current-Pulsed a TC = 25 C TA = 25 C Maximum Power Dissipation TC = 25 C TA = 25 C Operating and Store Temperature Range IDM PD TJ,Tstg -148 -44 25 2.