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CEC6072 - N-Channel Enhancement Mode Field Effect Transistor

Datasheet Summary

Features

  • 60V, 54A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. D G S 56 78 Bottom View DFN3.
  • 3 43 21.

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Datasheet Details

Part number CEC6072
Manufacturer CET
File Size 423.09 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEC6072 Datasheet
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CEC6072 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 54A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. D G S 56 78 Bottom View DFN3*3 43 21 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 Drain Current-Continuous@RθJc @RθJA Drain Current-Pulsed a@RθJc ID 54 ID 13 IDM 216 @RθJA IDM 52 Maximum Power Dissipation PD 41.
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