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CED07N65A - N-Channel MOSFET

Features

  • 650V, 6A, RDS(ON) = 1.45Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S.

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Datasheet Details

Part number CED07N65A
Manufacturer CET
File Size 396.39 KB
Description N-Channel MOSFET
Datasheet download datasheet CED07N65A Datasheet

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Full PDF Text Transcription

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CED07N65A/CEU07N65A N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 6A, RDS(ON) = 1.45Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 650 ±30 6 3.7 24 107 0.85 Repetitive Avalanche Energy EAR 0.
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