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CED110P03 - P-Channel MOSFET

Datasheet Summary

Features

  • -30V, -92A, RDS(ON) =6.0mΩ @VGS = -10V. RDS(ON) =9.0mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S.

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Datasheet Details

Part number CED110P03
Manufacturer CET
File Size 396.91 KB
Description P-Channel MOSFET
Datasheet download datasheet CED110P03 Datasheet
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Full PDF Text Transcription

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CED110P03/CEU110P03 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -92A, RDS(ON) =6.0mΩ @VGS = -10V. RDS(ON) =9.0mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
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