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CED11P20/CEU11P20
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-200V, -10.5A, RDS(ON) = 0.36Ω @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
-200
±30
-10.5 -42 78
0.6
Single Pulsed Avalanche Energy e
EAS 165
Single Pulsed Avalanche Current e
IAS 10.
CED11P20 Datasheet
