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CED11P20 - P-Channel MOSFET

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Features

  • -200V, -10.5A, RDS(ON) = 0.36Ω @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S.

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Datasheet Details

Part number CED11P20
Manufacturer CET
File Size 405.58 KB
Description P-Channel MOSFET
Datasheet download datasheet CED11P20 Datasheet
Additional preview pages of the CED11P20 datasheet.

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Full PDF Text Transcription

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CED11P20/CEU11P20 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -200V, -10.5A, RDS(ON) = 0.36Ω @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD -200 ±30 -10.5 -42 78 0.6 Single Pulsed Avalanche Energy e EAS 165 Single Pulsed Avalanche Current e IAS 10.
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