CED12P15 Overview
CED12P15/CEU12P15 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -150V, -12A, RDS(ON) = 0.24Ω @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS pliant. TO-251 & TO-252 package. D D CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S
CED12P15 Key Features
- 150V, -12A, RDS(ON) = 0.24Ω @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current