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CED12P15 - P-Channel MOSFET

Datasheet Summary

Features

  • -150V, -12A, RDS(ON) = 0.24Ω @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S.

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Datasheet preview – CED12P15

Datasheet Details

Part number CED12P15
Manufacturer CET
File Size 370.86 KB
Description P-Channel MOSFET
Datasheet download datasheet CED12P15 Datasheet
Additional preview pages of the CED12P15 datasheet.

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Full PDF Text Transcription

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CED12P15/CEU12P15 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -150V, -12A, RDS(ON) = 0.24Ω @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage(Typ) Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD -150 ±20 -12 -48 60 0.
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