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CED14G04 - N-Channel MOSFET

Features

  • 40V, 125A, RDS(ON) = 3.8mΩ @VGS = 10V. RDS(ON) = 6.8mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S.

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Datasheet Details

Part number CED14G04
Manufacturer CET
File Size 413.31 KB
Description N-Channel MOSFET
Datasheet download datasheet CED14G04 Datasheet
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Full PDF Text Transcription

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CED14G04/CEU14G04 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 40V, 125A, RDS(ON) = 3.8mΩ @VGS = 10V. RDS(ON) = 6.8mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 40 ±20 125 500 83 0.
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