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CED1710 - N-Channel MOSFET

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Features

  • 100V, 17A, RDS(ON) = 85mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D.

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Datasheet Details

Part number CED1710
Manufacturer CET
File Size 137.23 KB
Description N-Channel MOSFET
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Full PDF Text Transcription

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CED1710/CEU1710 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 17A, RDS(ON) = 85mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D PRELIMINARY G D G S CEU SERIES TO-252(D-PAK) G D S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 100 Units V V A A W W/ C C ±20 17 68 50 0.
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