CET CED1710
N-Channel MOSFET
FEATURES
100V, 17A, RDS(ON) = 85mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D PRELIMINARY G D G S CEU SERIES TO-252(D-PAK) G D S CED SERIES TO-251(I-PAK) SABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 100 Units V V A A W W/ C C ±20 17 68 50 0.4 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.5 50 Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 2005.May CED1710/CEU1710ELECTRICAL CHARACTERISTICS
Parameter Off Characteristics Drain-Source Br...