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CED30N08/CEU30N08
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
80V, 30A, RDS(ON) = 30mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package.
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
D S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C Single Pulsed Avalanche Energy e
Single Pulsed Avalanche Current e
Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit
VDS 80
VGS ±20
ID 30 19.5
IDM 120 57.7
PD 0.
CED30N08 Datasheet
