Datasheet4U Logo Datasheet4U.com

CED51A3 - N-Channel MOSFET

Datasheet Summary

Features

  • 30V, 35A, RDS(ON) = 14mΩ(typ) @VGS = 10V. RDS(ON) = 21mΩ(typ) @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S.

📥 Download Datasheet

Datasheet preview – CED51A3

Datasheet Details

Part number CED51A3
Manufacturer CET
File Size 139.75 KB
Description N-Channel MOSFET
Datasheet download datasheet CED51A3 Datasheet
Additional preview pages of the CED51A3 datasheet.

📁 Similar Datasheet

  • CED540L - N-Channel MOSFET (Chino-Excel Technology)
  • CED01N65 - N-Channel MOSFET (Chino-Excel Technology)
  • CED01N65A - N-Channel MOSFET (Chino-Excel Technology)
  • CED01N6G - N-Channel MOSFET (Chino-Excel Technology)
  • CED01N7 - N-Channel MOSFET (Chino-Excel Technology)
  • CED02N6G - N-Channel MOSFET (Chino-Excel Technology)
  • CED02N7G - N-Channel MOSFET (Chino-Excel Technology)
  • CED04N7G - N-Channel MOSFET (Chino-Excel Technology)
  • CED05P03 - P-Channel MOSFET (Chino-Excel Technology)
  • CED10P10 - P-Channel MOSFET (Chino-Excel Technology)
Other Datasheets by CET

Full PDF Text Transcription

Click to expand full text
CED51A3/CEU51A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 35A, RDS(ON) = 14mΩ(typ) @VGS = 10V. RDS(ON) = 21mΩ(typ) @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 30 Units V V A A W W/ C C ±20 35 140 50 0.
Published: |