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CED540N - N-Channel MOSFET

Datasheet Summary

Features

  • 100V, 25A, RDS(ON) = 53mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S.

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Datasheet Details

Part number CED540N
Manufacturer CET
File Size 391.60 KB
Description N-Channel MOSFET
Datasheet download datasheet CED540N Datasheet
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Full PDF Text Transcription

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CED540N/CEU540N N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 25A, RDS(ON) = 53mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 100 ±20 25 100 56 0.
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