Datasheet4U Logo Datasheet4U.com

CED6060R - N-Channel MOSFET

Datasheet Summary

Features

  • 60V, 30A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S.

📥 Download Datasheet

Datasheet preview – CED6060R

Datasheet Details

Part number CED6060R
Manufacturer CET
File Size 375.91 KB
Description N-Channel MOSFET
Datasheet download datasheet CED6060R Datasheet
Additional preview pages of the CED6060R datasheet.

📁 Similar Datasheet

  • CED603AL - N-Channel MOSFET (Chino-Excel Technology)
  • CED61A3 - N-Channel MOSFET (Chino-Excel Technology)
  • CED630N - N-Channel MOSFET (Chino-Excel Technology)
  • CED01N65 - N-Channel MOSFET (Chino-Excel Technology)
  • CED01N65A - N-Channel MOSFET (Chino-Excel Technology)
  • CED01N6G - N-Channel MOSFET (Chino-Excel Technology)
  • CED01N7 - N-Channel MOSFET (Chino-Excel Technology)
  • CED02N6G - N-Channel MOSFET (Chino-Excel Technology)
  • CED02N7G - N-Channel MOSFET (Chino-Excel Technology)
  • CED04N7G - N-Channel MOSFET (Chino-Excel Technology)
Other Datasheets by CET

Full PDF Text Transcription

Click to expand full text
CED6060R/CEU6060R N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 30A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 30 IDM 120 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 50 0.
Published: |