CED65P03
CED65P03 is P-Channel MOSFET manufactured by CET.
FEATURES
-30V, -65A, RDS(ON) = 9mΩ @VGS = -10V. RDS(ON) = 12mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
-30
±20
-65 -260 62.5 0.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 2.2 50
Units V V A A W
W/ C C
Units C/W C/W
Details are subject to change without notice .
Rev 1. 2011.Sep http://.cetsemi.
CED65P...
