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CED84A4 - N-Channel MOSFET

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Features

  • 40V, 80A, RDS(ON) = 5.1mΩ @VGS = 10V. RDS(ON) = 7.8mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G D S.

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Datasheet Details

Part number CED84A4
Manufacturer CET
File Size 386.46 KB
Description N-Channel MOSFET
Datasheet download datasheet CED84A4 Datasheet
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Full PDF Text Transcription

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CED84A4/CEU84A4 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 80A, RDS(ON) = 5.1mΩ @VGS = 10V. RDS(ON) = 7.8mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C VDS VGS ID 40 ±20 80 56 Drain Current-Pulsed a IDM 320 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 57.7 0.
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