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CEE02N6G Datasheet N-Channel Enhancement Mode Field Effect Transistor

Manufacturer: CET

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CEE02N6G n-channel enhancement mode field effect transistor by CET - Datasheet Preview

Datasheet Details

Part number	CEE02N6G
Manufacturer	CET
File Size	454.03 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Download	CEE02N6G Download (PDF)

Overview

CEE02N6G N-Channel Enhancement Mode Field Effect Transistor.

Key Features

600V, 2.0A, RDS(ON) = 5.0Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-126 package. D G CEE SERIES TO-126 S.

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