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CEF10N4 - N-Channel MOSFET

Datasheet Summary

Features

  • 450V ,5.6A ,RDS(ON)= 700mΩ @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole. G D 6 G D S TO-220F S.

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Datasheet Details

Part number CEF10N4
Manufacturer CET
File Size 65.34 KB
Description N-Channel MOSFET
Datasheet download datasheet CEF10N4 Datasheet
Additional preview pages of the CEF10N4 datasheet.

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Full PDF Text Transcription

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CEF10N4 Sep. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 450V ,5.6A ,RDS(ON)= 700mΩ @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole. G D 6 G D S TO-220F S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous -Pulsed ID IDM Drain-Source Diode Forward Current IS Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range PD TJ, TSTG Limit 450 30 5.6 17 5.6 45 0.
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