CET CEF13N5
N-Channel MOSFET
| Part No. | CEF13N5 |
|---|---|
| Datasheet | CEF13N5 Download |
| Manufacturer |  CET |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Type CEP13N5 CEB13N5 CEF13N5 VDSS 500V 500V 500V RDS(ON) 0.48Ω 0.48Ω 0.48Ω ID 13A 13A 13A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F SABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C Drain Current-Continuous @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy h Single Pulsed Avalanche Current h Operating and Store Temperature Range Tc = 25 C unless otherwise noted Symbol Limit TO-220/263 TO-220F VDS 500 VGS ±30 ID 13 13 d ID IDM e 8 8d 52 52d 214 60 PD 1.43 0.4 EAS 781 IAS 12.5 TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 0.7 62.5 2.5 65 Units V V A A A W W/ C mJ A C Units C/W C/W Details are subject to change without notice .
