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CEF18N5 - N-Channel Enhancement Mode Field Effect Transistor

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Features

  • Type CEP18N5 CEB18N5 CEF18N5 VDSS 500V 500V 500V RDS(ON) 0.27Ω 0.27Ω 0.27Ω ID 18A 18A 18A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

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Datasheet Details

Part number CEF18N5
Manufacturer CET
File Size 398.07 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEF18N5 Datasheet
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CEP18N5/CEB18N5 CEF18N5 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP18N5 CEB18N5 CEF18N5 VDSS 500V 500V 500V RDS(ON) 0.27Ω 0.27Ω 0.27Ω ID 18A 18A 18A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 500 ±30 18 11 72 219 1.8 18 d 11 d 72 d 74 0.
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