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CEG6946A - Dual N-Channel MOSFET

Key Features

  • 20V, 3.7A, RDS(ON) = 45mΩ @VGS = 4.5V. RDS(ON) = 75mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package. G2 S2 S2 D2 TSSOP-8 G1 S1 S1 D1 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 6 S2 5 G2.

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Datasheet Details

Part number CEG6946A
Manufacturer CET
File Size 106.43 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet CEG6946A Datasheet

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CEG6946A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 3.7A, RDS(ON) = 45mΩ @VGS = 4.5V. RDS(ON) = 75mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package. G2 S2 S2 D2 TSSOP-8 G1 S1 S1 D1 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 6 S2 5 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 20 VGS ±12 ID 3.7 IDM 15 Maximum Power Dissipation PD 1.