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CEG8205
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES
20V, 4.5A, RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package.
G2 S2 S2 D
D S1 S1 G1
1 2 3 4
8 D 7 S2 6 S2 5 G2
G1 S1 S1 D
TSSOP-8
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 Units V V A A W C
±10
4.5 25 1.
CEG8205 Datasheet
