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CEG8205A - Dual N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • 20V, 6A, RDS(ON) = 21mΩ (typ) @VGS = 4.5V. RDS(ON) = 30mΩ (typ) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package. G2 S2 S2 D D S1 S1 G1 1 2 3 4 8 D 7 S2 6 S2 5 G2 G1 S1 S1 D TSSOP-8.

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Datasheet Details

Part number CEG8205A
Manufacturer CET
File Size 124.28 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEG8205A Datasheet

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CEG8205A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6A, RDS(ON) = 21mΩ (typ) @VGS = 4.5V. RDS(ON) = 30mΩ (typ) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package. G2 S2 S2 D D S1 S1 G1 1 2 3 4 8 D 7 S2 6 S2 5 G2 G1 S1 S1 D TSSOP-8 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 Units V V A A W C ±12 6 25 1.