Datasheet Summary
Dual N-Channel Enhancement Mode Field Effect Transistor Features
20V, 6A, RDS(ON) = 21mΩ (typ) @VGS = 4.5V. RDS(ON) = 30mΩ (typ) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package.
G2 S2 S2 D
D S1 S1 G1
1 2 3 4
8 D 7 S2 6 S2 5 G2
G1 S1 S1...
