Datasheet4U Logo Datasheet4U.com

CEI02N6 - N-Channel Enhancement Mode Field Effect Transistor

Datasheet Summary

Features

  • Type CEP02N6 CEB02N6 CEI02N6 CEF02N6 VDSS 600V 600V 600V 600V RDS(ON) 5Ω 5Ω 5Ω 5Ω ID 2A 2A 2A 2A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. D G G D S S CEB SERIES TO-263(DD-PAK) G CEI SERIES TO-262(I2-PAK) G D S G D CEP SERIES TO-220 S CEF SERIES TO-220F S.

📥 Download Datasheet

Datasheet preview – CEI02N6

Datasheet Details

Part number CEI02N6
Manufacturer CET
File Size 151.00 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEI02N6 Datasheet
Additional preview pages of the CEI02N6 datasheet.

📁 Similar Datasheet

Other Datasheets by CET

Full PDF Text Transcription

Click to expand full text
CEP02N6/CEB02N6 CEI02N6/CEF02N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N6 CEB02N6 CEI02N6 CEF02N6 VDSS 600V 600V 600V 600V RDS(ON) 5Ω 5Ω 5Ω 5Ω ID 2A 2A 2A 2A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
Published: |