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CEJ8218 - Dual N-Channel Enhancement Mode Field Effect Transistor

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Features

  • 20V, 6.5A, RDS(ON) = 23mΩ @VGS = 4.5V. RDS(ON) = 34mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. S1.
  • Typical value by design G1.
  • 1K D CEJ8218 D G2.
  • 1K S2 D 8 D 7 D 6 D 5 2928-8J 1 2 3 4 S1 G1 S2 G2.

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Part number CEJ8218
Manufacturer CET
File Size 417.65 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
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    www.DataSheet.co.kr Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6.5A, RDS(ON) = 23mΩ @VGS = 4.5V. RDS(ON) = 34mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. S1 *Typical value by design G1 *1K D CEJ8218 D G2 *1K S2 D 8 D 7 D 6 D 5 2928-8J 1 2 3 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 Units V V A A W C ±12 6.5 25 1.
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