Datasheet Summary
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P-Channel Enhancement Mode Field Effect Transistor Features
-20V, -7.6A, RDS(ON) = 22mΩ @VGS = -4.5V. RDS(ON) = 32mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D1 8
D1 7
D2 6
D2 5
SO-8 1
1 S1
2 G1
3 S2
4...
