CET CEM2539
Dual Enhancement Mode Field Effect Transistor
| Part No. | CEM2539 |
|---|---|
| Datasheet | CEM2539 Download |
| Manufacturer |  CET |
| Description | Dual Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
20V, 7.5A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 24mΩ @VGS = 4.5V. RDS(ON) = 33mΩ @VGS = 2.5V. -20V, -4.0A, RDS(ON) = 80mΩ @VGS = -10V. RDS(ON) = 100mΩ @VGS = -4.5V. RDS(ON) = 150mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 D1 8 5 G1 *1K G2 S1 D1 7 D2 6 D2 5 S2 1 S1 2 G1 3 S2 4 G2ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 20 P-Channel -20 Units V V A A W C ±12 7.5 25 2.0 -55 to 150 ±12 -4.0 -15 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units C/W Details are subject to change without notice . 1 Rev 3. 2007.Sep. Datasheet pdf - CEM2539 N-ChannelELECTRICAL CHARACTERISTICS
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