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CEM3172 - N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • 30V, 8.9A, RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D 8 D 7 D 6 D 5 5 SO-8 1 1 S 2 S 3 S 4 G.

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Datasheet Details

Part number CEM3172
Manufacturer CET
File Size 107.73 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEM3172 Datasheet

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CEM3172 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 8.9A, RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D 8 D 7 D 6 D 5 5 SO-8 1 1 S 2 S 3 S 4 G ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 30 Units V V A A W C ±20 8.9 30 2.