Datasheet Summary
N-Channel Enhancement Mode Field Effect Transistor Features
30V, 7.5A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability.
D D 7 D 6 D 5
Lead free product is acquired. Surface mount Package.
SO-8 1
1 S
2 S
3 S
4...
