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CEM3501L
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V, -5A, RDS(ON) = 65mΩ @VGS = -10V. RDS(ON) = 75mΩ @VGS = -4.5V. RDS(ON) = 100mΩ @VGS = -2.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package.
DD D D 8 7 65
SO-8
1
1 234 S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -30
VGS ±12
Drain Current-Continuous Drain Current-Pulsed a
ID -5 IDM -20
Maximum Power Dissipation
PD 2.
CEM3501L Datasheet
