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CEM4309
Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY
FEATURES
40V, 5.8A, RDS(ON) = 38mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V.
-40V, -4.1A, RDS(ON) = 67mΩ @VGS = -10V. RDS(ON) = 106mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
1
D1 D1 D2 D2 87 65
1234 S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
N-Channel
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS 40
VGS ±20
ID 5.8 IDM 23
P-Channel -40
±20
-4.1 -16
Maximum Power Dissipation
PD 2.
CEM4309 Datasheet
