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CEM4501 - Dual-Channel MOSFET

Features

  • 20V, 8.3A, RDS(ON) = 18mΩ @VGS = 4.5V. RDS(ON) = 30mΩ @VGS = 2.5V. -20V, -5.0A, RDS(ON) = 42mΩ @VGS = -4.5V. RDS(ON) = 86mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 D1 D1 D2 D2 87 65 1234 S1 G1 S2 G2.

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Datasheet Details

Part number CEM4501
Manufacturer CET
File Size 143.89 KB
Description Dual-Channel MOSFET
Datasheet download datasheet CEM4501 Datasheet

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Full PDF Text Transcription

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CEM4501 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 20V, 8.3A, RDS(ON) = 18mΩ @VGS = 4.5V. RDS(ON) = 30mΩ @VGS = 2.5V. -20V, -5.0A, RDS(ON) = 42mΩ @VGS = -4.5V. RDS(ON) = 86mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 D1 D1 D2 D2 87 65 1234 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 20 VGS ±12 ID 8.3 IDM 30 P-Channel -20 ±12 -5 -20 Maximum Power Dissipation PD 2.
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