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CEP1175 - N-Channel MOSFET

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Features

  • Type CEP1175 CEB1175 CEF1175 VDSS 650V 650V 650V RDS(ON) 1Ω 1Ω 1Ω ID 10A 10A 10A e @VGS 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

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Datasheet Details

Part number CEP1175
Manufacturer CET
File Size 396.32 KB
Description N-Channel MOSFET
Datasheet download datasheet CEP1175 Datasheet
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Full PDF Text Transcription

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CEP1175/CEB1175 CEF1175 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP1175 CEB1175 CEF1175 VDSS 650V 650V 650V RDS(ON) 1Ω 1Ω 1Ω ID 10A 10A 10A e @VGS 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 VDS VGS ID IDM PD TJ,Tstg f TO-220F Units V V 650 ±30 10 40 167 1.33 -55 to 150 10 40 50 0.
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