CET CEP50P03
P-Channel MOSFET
| Part No. | CEP50P03 |
|---|---|
| Datasheet | CEP50P03 Download |
| Manufacturer |  CET |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
-30V, -47A, RDS(ON) =20mΩ @VGS = -10V. RDS(ON) =32mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 SABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -30 Units V V A A W W/ C C ±20 -47 -188 79 0.53 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.9 62.5 Units C/W C/W Specification and data are subject to change without notice . 1 Rev 2. 2005.May CEP50P03/CEB50P03ELECTRICAL CHARACTERISTICS
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Vol...
