CEP6060N Datasheet | CET

FEATURES 60V, 42A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. CEP6060N/CEB6060N S CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 60 Units V V A A W W/ C C ±20 42 168 88 0.59 -65 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.7 62.5 Units C/W C/W Details are subject to change without notice . 1 Rev 3. 2008.Oct. http://.cetsemi. http://.. CEP6060N/CEB6060N Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 24A VDS = 48V, ID = 38A, VGS = 10V VDD = 30V, ID = 19A, VGS = 10V, RGEN = 4.7Ω 16 3 36 4 28.7 6.3 9.7 42 1.3 32 6 72 8 38.1 ns ns ns ns n C n C n C A V VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 24A 2 19 4 25 V mΩ BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V 60 25 100 -100 V µA Tc = 25 C unless otherwise noted Symbol Test Condition Min Typ Max...