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CEP740G - N-Channel MOSFET

Key Features

  • Type CEP740G CEB740G VDSS 400V 400V CEF740G 400V RDS(ON) 0.55Ω 0.55Ω 0.55Ω ID 10A 10A 10A e @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D G D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

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Datasheet Details

Part number CEP740G
Manufacturer CET
File Size 521.37 KB
Description N-Channel MOSFET
Datasheet download datasheet CEP740G Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CEP740G/CEB740G CEF740G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP740G CEB740G VDSS 400V 400V CEF740G 400V RDS(ON) 0.55Ω 0.55Ω 0.55Ω ID 10A 10A 10A e @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D G D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS 400 VGS ±30 ID 10 10 e IDM f 40 40 e 125 40 PD 1.0 0.