CET CEP75N10
N-Channel MOSFET
| Part No. | CEP75N10 |
|---|---|
| Datasheet | CEP75N10 Download |
| Manufacturer |  CET |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
100V, 72A, RDS(ON) = 15mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G SABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C Drain Current-Continuous @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range Tc = 25 C unless otherwise noted Symbol Limit VDS 100 VGS ±20 ID 72 51 IDM 250 100 PD 0.66 EAS IAS TJ,Tstg 132 23 -55 to 175 Units V V A A A W W/ C mJ A C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.5 62.5 Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice .
