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CEP8030LA Datasheet PDF

CET CEP8030LA

N-Channel MOSFET

Part No. CEP8030LA
Datasheet CEP8030LA Download
Manufacturer
CET
Description N-Channel MOSFET
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CEP8030LA datasheet page 1 preview

FEATURES

30V, 75A,RDS(ON) = 6.5mΩ @VGS = 10V. RDS(ON) = 9.0mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S

ABSOLUTE MAXIMUM RATINGS

Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 30 ±20 75 225 75 0.5 Operating and Store Temperature Range TJ,Tstg -55 to 175 Units V V A A W W/ C C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.0 62.5 Units C/W C/W 2003.February 4 - 170 CEP8030LA/CEB8030LA

ELECTRICAL CHARACTERISTICS

Tc = 25
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