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CER3402
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 6.2A, RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 57mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. DIP-8 Package.
DD D D 8 7 65
5
DIP-8
1
1 234 S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS 30
VGS ±20
ID 6.2 IDM 25
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 50
Units V V A A W C
Units C/W
Details are subject to change without notice .
CER3402 Datasheet
