CES2317
Overview
CES2317 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.1A, RDS(ON) = 80mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V. RDS(ON) = 120mΩ @VGS = -2.5V. High dense cell design for extr...
| Part | CES2317 |
|---|---|
| Description | P-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | CET |
| Size | 387.02 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| CES2312 | Chino-Excel Technology | N-Channel MOSFET |
| CES2313 | Chino-Excel Technology | P-Channel MOSFET |
| CES2316 | Chino-Excel Technology | N-Channel MOSFET |