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CET3301 - P-Channel MOSFET

Key Features

  • -30V, -7.3A, RDS(ON) = 35mΩ @VGS = -10V. RDS(ON) = 53mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. SOT-223 package. D DS D G SOT-223 G S.

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Datasheet Details

Part number CET3301
Manufacturer CET
File Size 425.31 KB
Description P-Channel MOSFET
Datasheet download datasheet CET3301 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CET3301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -7.3A, RDS(ON) = 35mΩ @VGS = -10V. RDS(ON) = 53mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. SOT-223 package. D DS D G SOT-223 G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID -7.3 IDM -29 Maximum Power Dissipation PD 3 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 42 Units V V A A W C Units C/W Details are subject to change without notice .