CET CEU04N65
N-Channel MOSFET
| Part No. | CEU04N65 |
|---|---|
| Datasheet | CEU04N65 Download |
| Manufacturer |  CET |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
650V, 3.2A, RDS(ON) = 2.8Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G SABSOLUTE MAXIMUM RATINGS
Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 650 ±30 3.2 2 12.8 70 0.56 Single Pulsed Avalanche Energy d EAS 220 Single Pulsed Avalanche Current d IAS 4.2 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.8 50 Units V V A A A W W/ C mJ A C Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice .
