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CEU08N6A - N-Channel MOSFET

Datasheet Summary

Features

  • 600V, 6.2A, RDS(ON) = 1.25Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S.

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Datasheet Details

Part number CEU08N6A
Manufacturer CET
File Size 395.47 KB
Description N-Channel MOSFET
Datasheet download datasheet CEU08N6A Datasheet
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Full PDF Text Transcription

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CED08N6A/CEU08N6A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 600V, 6.2A, RDS(ON) = 1.25Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 600 VGS ±30 Drain Current-Continuous @ TC = 25 C @ TC = 100 C ID 6.2 4.4 Drain Current-Pulsed a IDM 24.8 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 107 0.7 Single Pulsed Avalanche Energy e EAS 192 Single Pulsed Avalanche Current e IAS 6.
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