CET CEU1012
N-Channel MOSFET
| Part No. | CEU1012 |
|---|---|
| Datasheet | CEU1012 Download |
| Manufacturer |  CET |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
120V, 10A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED1012/CEU1012 D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) SABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 120 Units V V A A W W/ C C ±20 10 40 50 0.3 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3 50 Units C/W C/W Details are subject to change without notice . 1 Rev 2. 2007.Jan CED1012/CEU1012ELECTRICAL CHARACTERISTICS
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Le...
